TI · FETs & Power MOSFETs · MPN CSD17309Q3
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| Gate Charge(Qg) | 7.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 580pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 2.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 43pF |
| RDS(on) | 4.2mΩ@8V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.15nF |
| Type | N-Channel |
N-Channel 30V 60A 2.8W Surface Mount VSON-CLIP-8(3.3x3.3)