TI · FETs & Power MOSFETs · MPN CSD17308Q3T
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| Gate Charge(Qg) | 5.1nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 365pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 28W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 16.5mΩ@3V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 700pF |
| Type | N-Channel |
30V 50A 1.8V 28W 16.5mΩ@3V 1 N-channel N-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS