TI CSD17308Q3

TI · FETs & Power MOSFETs · MPN CSD17308Q3

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Specifications

Gate Charge(Qg)3.9nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)365pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation28W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)12.5mΩ@3V
Number1 N-channel
Input Capacitance(Ciss)700pF
TypeN-Channel

Technical details

N-Channel 30V 50A 28W Surface Mount VSON-CLIP-8(3.3x3.3)

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