TI CSD17304Q3

TI · FETs & Power MOSFETs · MPN CSD17304Q3

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Specifications

Gate Charge(Qg)6.6nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)505pF
Current - Continuous Drain(Id)56A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation2.7W
Reverse Transfer Capacitance (Crss@Vds)38pF
RDS(on)5.9mΩ@8V
Number1 N-channel
Input Capacitance(Ciss)955pF
TypeN-Channel

Technical details

N-Channel 30V 56A 2.7W Surface Mount VSON-CLIP-8(3.3x3.3)

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