TI CSD17303Q5

TI · FETs & Power MOSFETs · MPN CSD17303Q5

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)23nC@4.5V
Current - Continuous Drain(Id)32A;100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation3.2W
RDS(on)2.4mΩ@8V
Number1 N-channel
Input Capacitance(Ciss)3.42nF

Technical details

30V 1.6V 3.2W 2.4mΩ@8V 1 N-channel VSON-8(5x6) Single FETs, MOSFETs RoHS

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