TI · FETs & Power MOSFETs · MPN CSD16570Q5B
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| Gate Charge(Qg) | 192nC@10V |
|---|---|
| Drain to Source Voltage | 25V |
| Output Capacitance(Coss) | 1.66nF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 195W |
| Reverse Transfer Capacitance (Crss@Vds) | 996pF |
| RDS(on) | 0.49mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.7nF |
| Type | N-Channel |
N-Channel 25V 100A 195W Surface Mount SON-8(5x6)