TI · FETs & Power MOSFETs · MPN CSD16556Q5B
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| Gate Charge(Qg) | 36nC@4.5V |
|---|---|
| Drain to Source Voltage | 25V |
| Output Capacitance(Coss) | 2.95nF |
| Current - Continuous Drain(Id) | 263A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 191W |
| Reverse Transfer Capacitance (Crss@Vds) | 280pF |
| RDS(on) | 1.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.18nF |
| Type | N-Channel |
25V 263A 1.7V 191W 1.5mΩ@4.5V 1 N-channel N-Channel VSON-CLIP-8(6x5) Single FETs, MOSFETs RoHS