TI CSD16415Q5T

TI · FETs & Power MOSFETs · MPN CSD16415Q5T

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)21nC@4.5V
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)3.3nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation3.2W
RDS(on)0.99mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)230pF
Number1 N-channel
Input Capacitance(Ciss)4.1nF
TypeN-Channel

Technical details

25V 100A 1.5V 3.2W 0.99mΩ@10V 1 N-channel N-Channel VSON-CLIP-8(6x5) Single FETs, MOSFETs RoHS

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