TI CSD16415Q5

TI · FETs & Power MOSFETs · MPN CSD16415Q5

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)29nC@4.5V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation3.2W
RDS(on)1.15mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.1nF

Technical details

N-Channel 25V 100A 3.2W Surface Mount VSON-8(5x6)

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