TI CSD16413Q5A

TI · FETs & Power MOSFETs · MPN CSD16413Q5A

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)9nC@4.5V
Output Capacitance(Coss)1.38nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)84pF
RDS(on)5.6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.78nF
TypeN-Channel

Technical details

N-Channel 25V 100A 3.1W Surface Mount VSONP-8(5x6)

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