TI · FETs & Power MOSFETs · MPN CSD16411Q3
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| Gate Charge(Qg) | 2.9nC@4.5V |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 35W |
| Reverse Transfer Capacitance (Crss@Vds) | 43pF |
| RDS(on) | 12mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 570pF |
| Type | N-Channel |
25V 60A 2.3V 35W 12mΩ@4.5V 1 N-channel N-Channel VSON-CLIP-8(3.3x3.3) Single FETs, MOSFETs RoHS