TI CSD16410Q5A

TI · FETs & Power MOSFETs · MPN CSD16410Q5A

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)3.9nC@4.5V
Current - Continuous Drain(Id)59A
Output Capacitance(Coss)600pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation3W
RDS(on)6.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)52pF
Number1 N-channel
Input Capacitance(Ciss)740pF
TypeN-Channel

Technical details

25V 59A 1.9V 3W 6.8mΩ@10V 1 N-channel N-Channel VSON-8(5x6) Single FETs, MOSFETs RoHS

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