TI · FETs & Power MOSFETs · MPN CSD16409Q3
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| Gate Charge(Qg) | 5.6nC@4.5V |
|---|---|
| Drain to Source Voltage | 25V |
| Output Capacitance(Coss) | 635pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 2.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 12.4mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 800pF |
| Type | N-Channel |
25V 60A 2.3V 2.6W 12.4mΩ@4.5V 1 N-channel N-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS