TI CSD16407Q5

TI · FETs & Power MOSFETs · MPN CSD16407Q5

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Specifications

Gate Charge(Qg)13.3nC@4.5V
Drain to Source Voltage25V
Output Capacitance(Coss)2.08nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)1.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.66nF
TypeN-Channel

Technical details

N-Channel 25V 100A 3.1W Surface Mount SON-8(5x6)

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