TI CSD16406Q3

TI · FETs & Power MOSFETs · MPN CSD16406Q3

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)8.1nC@4.5V
Output Capacitance(Coss)950pF
Current - Continuous Drain(Id)79A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation46W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)7.4mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.1nF
TypeN-Channel

Technical details

N-Channel 25V 79A 46W Surface Mount VSON-8(3.3x3.3)

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