TI CSD16401Q5

TI · FETs & Power MOSFETs · MPN CSD16401Q5

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)29nC@4.5V
Output Capacitance(Coss)3.3nF
Current - Continuous Drain(Id)261A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation156W
Reverse Transfer Capacitance (Crss@Vds)230pF
RDS(on)1.8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)4.1nF
TypeN-Channel

Technical details

N-Channel 25V 261A 156W Surface Mount SON-8(5x6)

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