TI CSD16342Q5A

TI · FETs & Power MOSFETs · MPN CSD16342Q5A

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)7.1nC@4.5V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation3W
RDS(on)4.7mΩ@8V
Number1 N-channel
Input Capacitance(Ciss)1.35nF

Technical details

N-Channel 25V 100A 3W Surface Mount VSONP-8(5x6)

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