TI CSD16340Q3T

TI · FETs & Power MOSFETs · MPN CSD16340Q3T

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)9.2nC@4.5V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation3W
RDS(on)4.5mΩ@8V
Number1 N-channel
Input Capacitance(Ciss)1.35nF

Technical details

25V 60A 1.1V 3W 4.5mΩ@8V 1 N-channel VSON-CLIP-8(3.3x3.3) Single FETs, MOSFETs RoHS

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