TI CSD16340Q3

TI · FETs & Power MOSFETs · MPN CSD16340Q3

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Specifications

Gate Charge(Qg)6.5nC@4.5V
Drain to Source Voltage25V
Output Capacitance(Coss)730pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))850mV
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)69pF
RDS(on)3.8mΩ@8V
Number1 N-channel
Input Capacitance(Ciss)1.35nF
TypeN-Channel

Technical details

N-Channel 25V 60A 3W Surface Mount VSON-CLIP-8(3.3x3.3)

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