TI · FETs & Power MOSFETs · MPN CSD16327Q3T
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| Drain to Source Voltage | 25V |
|---|---|
| Gate Charge(Qg) | 8.4nC@4.5V |
| Output Capacitance(Coss) | 960pF |
| Current - Continuous Drain(Id) | 112A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 74W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 6.5mΩ@3V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.3nF |
| Type | N-Channel |
N-Channel 25V 112A 74W Surface Mount VSON-8(3.3x3.3)