TI CSD16327Q3

TI · FETs & Power MOSFETs · MPN CSD16327Q3

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)8.4nC@4.5V
Output Capacitance(Coss)960pF
Current - Continuous Drain(Id)112A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation74W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)6.5mΩ@3V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
TypeN-Channel

Technical details

N-Channel 25V 112A 74W Surface Mount VSON-CLIP-8(3.3x3.3)

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