TI · FETs & Power MOSFETs · MPN CSD16322Q5
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| Drain to Source Voltage | 25V |
|---|---|
| Gate Charge(Qg) | 9.7nC@4.5V |
| Current - Continuous Drain(Id) | 21A;97A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 3.1W |
| RDS(on) | 5mΩ@8V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.365nF |
N-Channel 25V 21A 97A 3.1W Surface Mount VSON-8(5x6)