TI CSD16321Q5

TI · FETs & Power MOSFETs · MPN CSD16321Q5

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Specifications

Gate Charge(Qg)19nC@4.5V
Drain to Source Voltage25V
Output Capacitance(Coss)2.2nF
Current - Continuous Drain(Id)177A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation113W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)3.8mΩ@3V
Number1 N-channel
Input Capacitance(Ciss)3.1nF
TypeN-Channel

Technical details

N-Channel 25V 177A 113W Surface Mount PDFN-8(5.2x6.2)

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