TI CSD13383F4T

TI · FETs & Power MOSFETs · MPN CSD13383F4T

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Specifications

Configuration-
Drain to Source Voltage12V
Gate Charge(Qg)2.6nC@4.5V
Output Capacitance(Coss)88pF
Current - Continuous Drain(Id)2.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.25V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)61pF
RDS(on)65mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)291pF

Technical details

12V 2.9A 1.25V 500mW 65mΩ@2.5V 1 N-channel N-Channel PicoStar-3 Single FETs, MOSFETs RoHS

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