TI CSD13383F4

TI · FETs & Power MOSFETs · MPN CSD13383F4

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Specifications

Drain to Source Voltage12V
Gate Charge(Qg)2.6nC@4.5V
Output Capacitance(Coss)88pF
Current - Continuous Drain(Id)2.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.25V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)61pF
RDS(on)65mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)291pF
TypeN-Channel

Technical details

N-Channel 12V 2.9A 500mW Surface Mount PicoStar-3

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