TI · FETs & Power MOSFETs · MPN CSD13306WT
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| Drain to Source Voltage | 12V |
|---|---|
| Gate Charge(Qg) | 8.6nC@4.5V |
| Output Capacitance(Coss) | 421pF |
| Current - Continuous Drain(Id) | 3.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 294pF |
| RDS(on) | 15.5mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.37nF |
| Type | N-Channel |
12V 3.5A 1V 1.9W 15.5mΩ@2.5V 1 N-channel N-Channel DSBGA-6 Single FETs, MOSFETs RoHS