TI CSD13303W1015

TI · FETs & Power MOSFETs · MPN CSD13303W1015

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Specifications

Drain to Source Voltage12V
Gate Charge(Qg)4.7nC@4.5V
Current - Continuous Drain(Id)31A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation1.65W
RDS(on)20mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)715pF

Technical details

12V 31A 1.2V 1.65W 20mΩ@4.5V 1 N-channel DSBGA-6 Single FETs, MOSFETs RoHS

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