TI · FETs & Power MOSFETs · MPN CSD13303W1015
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| Drain to Source Voltage | 12V |
|---|---|
| Gate Charge(Qg) | 4.7nC@4.5V |
| Current - Continuous Drain(Id) | 31A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 1.65W |
| RDS(on) | 20mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 715pF |
12V 31A 1.2V 1.65W 20mΩ@4.5V 1 N-channel DSBGA-6 Single FETs, MOSFETs RoHS