TI · FETs & Power MOSFETs · MPN CSD13302WT
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| Drain to Source Voltage | 12V |
|---|---|
| Gate Charge(Qg) | 7.8nC@4.5V |
| Current - Continuous Drain(Id) | 1.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Pd - Power Dissipation | 1.8W |
| RDS(on) | 17.1mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 862pF |
12V 1.6A 1.3V 1.8W 17.1mΩ@4.5V 1 N-channel DSBGA-4(1x1) Single FETs, MOSFETs RoHS