TI CSD13302W

TI · FETs & Power MOSFETs · MPN CSD13302W

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Specifications

Drain to Source Voltage12V
Gate Charge(Qg)7.8nC@4.5V
Current - Continuous Drain(Id)1.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation1.8W
RDS(on)17.1mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)862pF

Technical details

N-Channel 12V 1.6A 1.8W Surface Mount DSBGA-4

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