TI CSD13201W10

TI · FETs & Power MOSFETs · MPN CSD13201W10

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Specifications

Gate Charge(Qg)2.9nC@4.5V
Drain to Source Voltage12V
Current - Continuous Drain(Id)1.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)34mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)462pF

Technical details

N-Channel 12V 1.6A 1.2W Surface Mount DSBGA-4

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