TI BUZ42

TI · FETs & Power MOSFETs · MPN BUZ42

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Specifications

Drain to Source Voltage500V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)900pF
TypeN-Channel

Technical details

500V 4A 2.1V 75W 2Ω@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs

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