TI · FETs & Power MOSFETs · MPN BUZ32
No reviews yet — be the first to review TI BUZ32.
| Drain to Source Voltage | 200V |
|---|---|
| Output Capacitance(Coss) | 130pF |
| Current - Continuous Drain(Id) | 9.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 75W |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF |
| RDS(on) | 400mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 530pF |
| Type | N-Channel |
200V 9.5A 4V 75W 400mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs