TI · FETs & Power MOSFETs · MPN 2N6895
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| Drain to Source Voltage | 100V |
|---|---|
| Output Capacitance(Coss) | 80pF |
| Current - Continuous Drain(Id) | 1.16A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 3.65Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 150pF |
| Type | P-Channel |
100V 1.16A 4V 3.65Ω@10V 1 P-Channel P-Channel TO-205AF(TO-39) Single FETs, MOSFETs