TI 2N6786

TI · FETs & Power MOSFETs · MPN 2N6786

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Specifications

Drain to Source Voltage400V
Gate Charge(Qg)8.4nC@10V
Current - Continuous Drain(Id)1.25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.15V
Pd - Power Dissipation15W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)3.6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

400V 1.25A 4.15V 15W 3.6Ω@10V 1 N-channel N-Channel TO-205AF(TO-39) Single FETs, MOSFETs

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