TI · FETs & Power MOSFETs · MPN 2N6786
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| Drain to Source Voltage | 400V |
|---|---|
| Gate Charge(Qg) | 8.4nC@10V |
| Current - Continuous Drain(Id) | 1.25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.15V |
| Pd - Power Dissipation | 15W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 3.6Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
400V 1.25A 4.15V 15W 3.6Ω@10V 1 N-channel N-Channel TO-205AF(TO-39) Single FETs, MOSFETs