TI · FETs & Power MOSFETs · MPN 2N6767
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| Drain to Source Voltage | 350V |
|---|---|
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 400mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3nF |
| Type | N-Channel |
350V 12A 4V 150W 400mΩ@10V 1 N-channel N-Channel TO-3 Single FETs, MOSFETs