TI 2N6761

TI · FETs & Power MOSFETs · MPN 2N6761

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Specifications

Drain to Source Voltage450V
Output Capacitance(Coss)200pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)800pF
TypeN-Channel

Technical details

450V 4A 4V 75W 2Ω@10V 1 N-channel N-Channel TO-3 Single FETs, MOSFETs

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