TI 2N6760

TI · FETs & Power MOSFETs · MPN 2N6760

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Specifications

Drain to Source Voltage400V
Gate Charge(Qg)39nC@10V
Current - Continuous Drain(Id)5.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation4W;75W
RDS(on)1.22Ω@10V
Number1 N-channel

Technical details

400V 5.5A 4V 1.22Ω@10V 1 N-channel TO-204AA Single FETs, MOSFETs

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