TI 2N6759

TI · FETs & Power MOSFETs · MPN 2N6759

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Specifications

Drain to Source Voltage350V
Output Capacitance(Coss)300pF
Current - Continuous Drain(Id)4.5A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
RDS(on)1.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)800pF

Technical details

350V 4.5A 4V 1.5Ω@10V 1 N-channel TO-3 Single FETs, MOSFETs

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