TI 2N6756

TI · FETs & Power MOSFETs · MPN 2N6756

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)-
Output Capacitance(Coss)500pF
Current - Continuous Drain(Id)14A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)180mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)800pF

Technical details

100V 14A 4V 180mΩ@10V 1 N-channel TO-204AA Single FETs, MOSFETs

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