Techcode TDM3744

Techcode · FETs & Power MOSFETs · MPN TDM3744

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Specifications

Gate Charge(Qg)74nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)1.317nF
Current - Continuous Drain(Id)196A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation272W
Reverse Transfer Capacitance (Crss@Vds)91pF
RDS(on)3.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.635nF
TypeN-Channel

Technical details

80V 196A 4V 272W 3.9mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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