Techcode TDM3426B

Techcode · FETs & Power MOSFETs · MPN TDM3426B

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Specifications

Gate Charge(Qg)12nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)318pF
Current - Continuous Drain(Id)18A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)16mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)600pF
TypeN-Channel

Technical details

N-Channel 30V 18A 20W Surface Mount SOT-89

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