Techcode · FETs & Power MOSFETs · MPN TDM3412
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| Gate Charge(Qg) | 12nC@10V |
|---|---|
| Configuration | Half-Bridge |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 318pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 20W |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| RDS(on) | 17.5mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 600pF |
N-Channel Array 30V 18A 20W Surface Mount DFN-8-EP(3x3)