Techcode TDM3412

Techcode · FETs & Power MOSFETs · MPN TDM3412

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Specifications

Gate Charge(Qg)12nC@10V
ConfigurationHalf-Bridge
Drain to Source Voltage30V
Output Capacitance(Coss)318pF
Current - Continuous Drain(Id)18A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)17.5mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)600pF

Technical details

N-Channel Array 30V 18A 20W Surface Mount DFN-8-EP(3x3)

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