TECH PUBLIC TPSQ3419EV-T1-GE3

TECH PUBLIC · FETs & Power MOSFETs · MPN TPSQ3419EV-T1-GE3

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Specifications

Gate Charge(Qg)7.1nC@4.5V
Drain to Source Voltage40V
Output Capacitance(Coss)122pF
Current - Continuous Drain(Id)5A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.6W
RDS(on)85mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)78pF
Number1 P-Channel
Input Capacitance(Ciss)833pF
TypeP-Channel

Technical details

P-Channel 40V 5A 1.6W Surface Mount SOT-23-6

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