TECH PUBLIC · FETs & Power MOSFETs · MPN TPSIR882DP-T1-GE3
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| Output Capacitance(Coss) | 410pF |
|---|---|
| Pd - Power Dissipation | 57W |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 40nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| RDS(on) | 6.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF |
| Number | - |
| Input Capacitance(Ciss) | 2.86nF |
57W 100V 1.2V 6.5mΩ@10V N-Channel PDFN-8(5x6) Single FETs, MOSFETs RoHS