TECH PUBLIC TPSIR108DP-T1-RE3

TECH PUBLIC · FETs & Power MOSFETs · MPN TPSIR108DP-T1-RE3

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Specifications

Output Capacitance(Coss)400pF
Pd - Power Dissipation57W
Configuration-
Drain to Source Voltage100V
Gate Charge(Qg)40nC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
RDS(on)12.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)36pF
Number-
Input Capacitance(Ciss)2.8nF

Technical details

57W 100V 3V 12.5mΩ@10V N-Channel PDFN-8(5x6) Single FETs, MOSFETs RoHS

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