TECH PUBLIC · FETs & Power MOSFETs · MPN TPSI7635DP-T1-GE3
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| Output Capacitance(Coss) | 1.57nF |
|---|---|
| Pd - Power Dissipation | 150W |
| Drain to Source Voltage | 20V |
| Gate Charge(Qg) | 136nC |
| Configuration | - |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Reverse Transfer Capacitance (Crss@Vds) | 1.18nF |
| RDS(on) | 2.3mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 9.246nF |
150W 20V 600mV 2.3mΩ@10V 1 P-Channel P-Channel PDFN-8(5x6) Single FETs, MOSFETs RoHS