TECH PUBLIC · FETs & Power MOSFETs · MPN TPSI4816BDY-T1-GE3
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| Gate Charge(Qg) | 16nC@15V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 11.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 800mW |
| RDS(on) | 14mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.61nF |
N-Channel Array 30V 11.2A 0.8W Surface Mount SOP-8