TECH PUBLIC TPNTR4101PT1G

TECH PUBLIC · FETs & Power MOSFETs · MPN TPNTR4101PT1G

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Specifications

Gate Charge(Qg)7.8nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)290pF
Current - Continuous Drain(Id)4.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)190pF
RDS(on)75mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)740pF
TypeP-Channel

Technical details

P-Channel 20V 4.1A 1.7W Surface Mount SOT-23

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