TECH PUBLIC TPNTGD4167CT1G

TECH PUBLIC · FETs & Power MOSFETs · MPN TPNTGD4167CT1G

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Specifications

Gate Charge(Qg)5nC@15V
Drain to Source Voltage30V
Output Capacitance(Coss)35pF;47pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)28pF
RDS(on)85mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)199pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 30V 3A 1.2W Surface Mount SOT-23-6

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