TECH PUBLIC · FETs & Power MOSFETs · MPN TPM60NB7S8
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 22nC@30V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 2W |
| RDS(on) | 45mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 979pF |
N-Channel Array 60V 6A 2W Surface Mount SOIC-8